Intersubband relaxation dynamics in narrow InGaAs/AlAsSb quantum well structures studied by femtosecond pump-probe spectroscopy

被引：0
|
作者：
Tribuzy, C. V-B. [1 ]
Ohser, S. [1 ]
Winnerl, S. [1 ]
Grenzer, J. [1 ]
Schneider, H. [1 ]
Helm, M. [1 ]
Neuhaus, J. [2 ]
Dekorsy, T. [2 ]
Biermann, K. [3 ]
Kuenzel, H. [3 ]
机构：
[1] Forschungszentrum Rossendorf EV, Inst Ion Beam Phys & Mat Res, POB 510119, D-01314 Dresden, Germany
[2] Univ Konstanz, Dept Phys & Cent Appl Photon, Constance, Germany
[3] Fraunhofer Inst Telecommun, Heinrich Hertz Inst, Berlin, Germany
来源：
PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2007年 / 893卷
关键词：
intersubband relaxation; ultrafast dynamics; intervalley scattering; InGaAs/AlAsSb;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Intersubband relaxation dynamics in modulation doped InGaAs/AlAsSb multiquantum well (QW), with different QW thicknesses was investigated by femtosecond pump-probe spectroscopy. At early delay times, the samples show an exponential decay of the transient transmission with picosecond time constants. At later delay times, the relaxation dynamics depends on QW thickness. The presence of a slowly decaying component indicates the transfer of electrons to states related to indirect valleys in the barriers. This result is further confirmed by solving three-level rate equations.
引用
收藏
页码：473 / +
页数：2
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