Improved 0.25um salicide yield-via amorphous poly process optimizing

被引：0
|
作者：
Hsu, PK [1 ]
Shveh, YJ [1 ]
Kuo, DW [1 ]
Ku, SY [1 ]
You, Y [1 ]
机构：
[1] Taiwan Semicond Mfg Co Ltd, Hsinchu 300, Taiwan
来源：
2002 SEMICONDUCTOR MANUFACTURING TECHNOLOGY WORKSHOP | 2002年
关键词：
D O I：
暂无
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
The influence of process was investigated on A-Si poly bump (SEM top view as Fig :1) in this research, especially, the density of. poly bump was also studied to realize its characterization. This study showed that oxygen concentration has strong correlation with;bump density. In other word; the bump. density increases as oxygen concentration increase. In-order to reduce O2 concentration, the following approach to verify it. 1) Deposition pressure 2) Loading and unloading temperature; 3) Loading area 02 concentration - lower 02 concentration on loading area would get lowly bumps; as rig 5. In conclusion, the CP yield :gained about 13% on Saliside product on well control a-poly process condition.
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页码：195 / 197
页数：3
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