Phenomenological model for the spontaneous polarization of GaN

被引：8
|
作者：
Yan, W. S. [1 ]
Zhang, R.
Xiu, X. Q.
Xie, Z. L.
Han, P.
Jiang, R. L.
Gu, S. L.
Shi, Y.
Zheng, Y. D.
机构：
[1] Nanjing Univ, Key Lab Adv Photon & Elect Mat, Nanjing 210093, Peoples R China
[2] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 18期
关键词：
D O I：
10.1063/1.2736210
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A phenomenological model is presented to determine the experimental value of the spontaneous polarization of GaN. The expression of the spontaneous polarization at room temperature is obtained. The electrostrictive coefficient M-33 of a wurtzite GaN film is used to evaluate the experimental value of the spontaneous polarization of GaN. The exact experimental value of the spontaneous polarization of GaN can be obtained as long as the electrostrictive coefficient M-33 of the single crystal zinc blende GaN film is measured. The phenomenological model can also be used to determine the experimental values of the spontaneous polarization in other III-V nitrides, AlN and InN. (C) 2007 American Institute of Physics.
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页数：3
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