A Threshold Voltage Compensated Wideband RF Energy Harvesting Rectifier at 45 nm Technology

被引：0

作者：

Sarma, Manash Pratim ^{[1
]}

Sarma, Kanadarpa Kumar ^{[1
]}

Mastorakis, Nikos E. ^{[2
]}

机构：

[1] Gauhati Univ, Dept ECE, Gauhati, Assam, India

[2] Tech Univ Sofia, Fac Engn, Sofia, Bulgaria

来源：

2019 3RD EUROPEAN CONFERENCE ON ELECTRICAL ENGINEERING AND COMPUTER SCIENCE (EECS 2019) | 2019年

关键词：

Energy Harvesting; PCE; Transmission Gate; Dynamic Power Dissipation; Leakage Power;

D O I：

10.1109/EECS49779.2019.00040

中图分类号：

TP18 [人工智能理论];

学科分类号：

081104 ; 0812 ; 0835 ; 1405 ;

摘要：

Equipping a modern day communication system with RF energy harvesting capability is the need of the hour and to make this a reality a high frequency rectifier is indeed indispensable. To trap the real RF energy successfully the rectifier must be able to provide a sufficiently higher percentage conversion ratio (PCE) at a lower range of signal power. This paper presents a simplified 3-transistor design of a high frequency rectifier with a threshold voltage compensation techniques to achieve a PCE upto 85% at -2dBm in its single stage implementation. This can be stated to be one of the highest in-class efficiency as compared to recently reported designs. From the frequency response it is observed to exhibit wide band performance spanning almost all popular wireless bands. The dynamic power dissipation (DPD) is calculated to be 6.25pW at -2dB, whereas the leakage power (LP) is observed to be zero.

引用

页码：155 / 159

页数：5

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