Linearity limitations of AlGaN/GaN HFET's

被引：2

作者：

Liu, Y. ^{[1
]}

Trew, R. J. ^{[1
]}

Bilbro, G. L. ^{[1
]}

Kuang, W. ^{[1
]}

Yin, H. ^{[1
]}

机构：

[1] North Carolina State Univ, ECE Dept, Box 791, Raleigh, NC 27695 USA

来源：

2006 IEEE ANNUAL WIRELESS AND MICROWAVE TECHNOLOGY CONFERENCE | 2006年

关键词：

AlGaN/GaN heterostructure field-effect transistors (HFETs); large-signal operation; nonlinear source resistance;

D O I：

10.1109/GCC.2006.65

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Due to high mobility (1000 similar to 1500 cm/V-2), high sheet charge density (similar to 10(13) cm(-2)), and high electron saturation velocity, (similar to 2.0x 10(5) cm/s), A]GaN/GaN HFET's were shown to have great potential for linear operation in high dynamic range module. However, significant linearity degradation was found in practical devices compared to that predicted from theoretic derivation. In this work it is demonstrated that nonlinear source resistance that varies in magnitude with the channel conduction current limits these device's RF performance by suppressing the channel I-MAX value and introducing nonlinearity under large signal operation. The nonlinear source resistance can be affected by changing the length of the gate-source access region. RF performance is improved by minimizing the nonlinearity in the source resistance.

引用

页码：149 / +

页数：2

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