Tunneling transfer and energy relaxation rate of photo-excited carriers in coupled quantum wells

被引:4
|
作者
Sawaki, N [1 ]
Anzai, N [1 ]
Murakami, T [1 ]
Yamaguchi, M [1 ]
Ikeda, T [1 ]
Taya, M [1 ]
机构
[1] Nagoya Univ, Dept Elect, Chikusa Ku, Nagoya, Aichi 46401, Japan
关键词
coupled quantum wells; tunneling transfer rate; energy relaxation rate;
D O I
10.1143/JJAP.36.4008
中图分类号
O59 [应用物理学];
学科分类号
摘要
Tunneling transfer rate between coupled quantum wells/dots and the energy relaxation rate are studied as a function of the density of excited carriers. Both are expected to be determined by the emission rate of LO/LA phonons. It is found that if the carrier density is reduced, the tunneling escape time decreases but the energy relaxation time increases. This suggests that the emission of LO phonons produces non-equilibrium phonons which reduce the effective LO phonon emission rate, but carrier-carrier interaction enhances the scattering rate due to LA phonons. By reducing the size of the tunneling structure, i.e., in a quasi-zero-dimensional structure, the LA phonon emission rate is also reduced.
引用
收藏
页码:4008 / 4012
页数:5
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