Abnormal On-Current Degradation Under Non-Conductive Stress in Contact Field Plate Lateral Double-Diffused Metal-Oxide- Semiconductor Transistor With 0.13-μm Bipolar-CMOS-DMOS Technology

被引：4

作者：

Hung, Wei-Chun ^{[1
]}

Tu, Yu-Fa ^{[2
]}

Chang, Ting-Chang ^{[1
,3
]}

Tai, Mao-Chou ^{[4
]}

Tan, Yung-Fang ^{[5
]}

Chen, Kuan-Hsu ^{[1
]}

Yeh, Chien-Hung ^{[4
]}

Tu, Hong-Yi ^{[5
]}

Kuo, Hung-Ming ^{[1
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan

[2] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 30013, Taiwan

[3] Natl Sun Yat Sen Univ, Ctr Crystal Res, Kaohsiung 80424, Taiwan

[4] Natl Sun Yat Sen Univ, Dept Photon, Kaohsiung 80424, Taiwan

[5] Natl Sun Yat Sen Univ, Dept Mat & Optoelect Sci, Kaohsiung 80424, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2022年 / 43卷 / 05期

关键词：

Degradation; Stress; Transistors; Reliability; Electric fields; Resistance; Integrated circuits; Non-conductive stress (NCS); laterally diffused metal-oxide-semiconductor (LDMOS); contact field plate (CFP); LDMOS;

D O I：

10.1109/LED.2022.3164475

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study, abnormal on-current (I-on) degradation in n-type lateral double-diffused metal-oxide-semiconductor transistor (LDMOS) after non-conductive stress (NCS) is investigated. The degradation is caused by electron injection into the insulator layer (IL) during stress. Moreover, I-on degradation reaches saturation within a short time after stress. Experimental data and technology computer aided design (TACD) simulations show that, after NCS, the contact field plate (CFP) induces carriers to inject into the IL above the drift region. It increases the overall on-resistance (R-on) and results in I-on degradation during turn-on.

引用

页码：769 / 772

页数：4