A 0.05 mm2, 350 mV, 14 nW Fully-Integrated Temperature Sensor in 180-nm CMOS

被引：20

作者：

Zambrano, Benjamin ^{[1
]}

Garzon, Esteban ^{[1
]}

Strangio, Sebastiano ^{[2
]}

Crupi, Felice ^{[1
]}

Lanuzza, Marco ^{[1
]}

机构：

[1] Univ Calabria, Dept Comp Engn Modeling Elect & Syst DIMES, I-87036 Arcavacata Di Rende, Italy

[2] Univ Pisa, Dept Informat Engn, I-56122 Pisa, Italy

来源：

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS | 2022年 / 69卷 / 03期

关键词：

CMOS-based temperature sensor; low-voltage; low-power; ring oscillator; real-time sensing; TO-DIGITAL CONVERTER; DEGREES-C; SOC;

D O I：

10.1109/TCSII.2021.3112812

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this brief, we present a fully-integrated ring-oscillator based CMOS temperature sensor for Internet-of-Things. Our design relies on a low-complexity PMOS-based sensing circuit to convert temperature into two sub-threshold biasing currents. These are then used to define two oscillation frequencies, whose ratio increases linearly with the temperature. Change in the frequency ratio is finally translated into a digital output code. The proposed sensor was fabricated in 180-nm CMOS technology. When powered at 350 mV, it can achieve an energy/conversion of 0.46 nJ in a conversion time of 33 ms. Moreover, it exhibits a measurement resolution of 0.27 degrees C and a resolution figure-of-merit as low as 0.034 nJ degrees C-2.

引用

页码：749 / 753

页数：5

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