Modeling and Simulation of Polycrystalline Silicon Photovoltaic Cells

被引:0
|
作者
Belkaid, Abdelhakim [1 ]
Colak, Ilhami [2 ]
Kayisli, Korhan [2 ]
Sara, Mustapha [3 ]
Bayindir, Ramazan [4 ]
机构
[1] Univ A Mira, Elect Engn Dept, Bejaia, Algeria
[2] Nisantasi Univ, Dept Elect Elect Engn, Istanbul, Turkey
[3] Univ MB El Ibrahimi, Dept Elect, Bordj Bou Arreridj, Algeria
[4] Gazi Univ, Dept Elect & Elect Engn, Ankara, Turkey
关键词
Smart grid; Photovoltaic cells; polycrystalline cells; single-diode model; modeling;
D O I
10.1109/icsmartgrid48354.2019.8990733
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
The smart grid system can be integrated from different sources of renewable energy, such as photovoltaic panels, built by a large number of solar cells. The aim of this work is to study the influence of the single-diode model parameters on the current-voltage and power-voltage characteristics of the polycrystalline silicon photovoltaic (PV) cells. These parameters are series resistance, shunt resistance, and ideality factor. In addition the influence of the illumination and the temperature is examined. It was found that, the simulation results are acceptable; the model confirms that it is in agreement with the PV panel behavior as given by the manufacturer.
引用
收藏
页码:155 / 158
页数:4
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