Research on Silicon-Substrate-Integrated Widely Tunable, Narrow Linewidth External Cavity Lasers

被引:3
|
作者
Li, Xuan [1 ]
Shi, Junce [1 ]
Wei, Long [1 ]
Ding, Keke [1 ]
Ma, Yuhang [1 ]
Li, Zaijin [1 ]
Li, Lin [1 ]
Qu, Yi [1 ]
Qiao, Zhongliang [1 ]
Liu, Guojun [1 ]
Zeng, Lina [1 ]
机构
[1] Hainan Normal Univ, Coll Phys & Elect Engn, Academician Team Innovat Ctr Hainan Prov, Key Lab Laser Technol & Optoelect Funct Mat Haina, Haikou 571158, Hainan, Peoples R China
基金
中国国家自然科学基金; 海南省自然科学基金;
关键词
silicon substrate; narrow linewidth; widely tunable; external cavity; HYBRID; COMPACT;
D O I
10.3390/cryst12050674
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Widely tunable, narrow linewidth external cavity lasers on silicon substrates have many important applications, such as white-light interferometry, wavelength division multiplexing systems, coherent optical communication, and optical fiber sensor technology. Wide tuning range, high laser output power, single mode, stable spectral output, and high side-mode suppression ratio external cavity lasers have attracted much attention for their merits. In this paper, two main device-integrated structures for achieving widely tunable, narrow linewidth external cavity lasers on silicon substrates are reviewed and compared in detail, such as MRR-integrated structure and MRR-and-MZI-integrated structure of external cavity semiconductor lasers. Then, the chip-integrated structures are briefly introduced from the integration mode, such as monolithic integrated, heterogeneous integrated, and hybrid integrated. Results show that the silicon-substrate-integrated external cavity lasers are a potential way to realize a wide tuning range, high power, single mode, stable spectral output, and high side-mode suppression ratio laser output.
引用
收藏
页数:18
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