Enhancement of electron mobility in quasi-one-dimensional structure

被引：2
|
作者：
Niwa, S [1 ]
Yamaguchi, M [1 ]
Suzuki, T [1 ]
Sawaki, N [1 ]
机构：
[1] Nagoya Univ, Dept Elect, Chikusa Ku, Nagoya, Aichi 46401, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 6A期
关键词：
one-dimensional structure; phonon scattering; electron mobility; Shubnikov de Haas effect; femtosecond spectroscopy;
D O I：
10.1143/JJAP.36.3675
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The electron mobility and energy relaxation phenomena in GaAs wires with geometrical width of 300-400 nm were investigated using the magnetotransport and photoluminescence (PL) intensity correlation method. The electron mobility at 4.2 K was analyzed with the Shubnikov de Haas effect. It was found that the narrower the wire width is the higher the electron mobility is. The femtosecond PL measurements were performed at 77 K. The rate of cooling with emission of LO phonons of photoexcited hot electrons was found to be lower in narrower wires. The electric field dependence of the PL spectra showed that the LA phonon scattering rate is also reduced in quasi-one-dimensional electron gas (Q-1DEG) structures.
引用
收藏
页码：3675 / 3680
页数：6
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