Electroluminescent devices with Ga2O3:Mn thin-film emitting layer prepared by sol-gel process

被引：45

作者：

Minami, T ^{[1
]}

Shirai, T ^{[1
]}

Nakatani, T ^{[1
]}

Miyata, T ^{[1
]}

机构：

[1] Kanazawa Inst Technol, Electron Device Syst Lab, Nonoichi, Ishikawa 9218501, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2000年 / 39卷 / 6A期

关键词：

oxide phosphor; thin-film electroluminescent device; electroluminescence; phosphor; Ga2O3; sol-gel; chemical deposition; display;

D O I：

10.1143/JJAP.39.L524

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-luminance electroluminescent devices have been newly developed using a Ga2O3:Mn thin film prepared by a sol-gel process. The sol-gel process, which eliminates the need for vacuum processes, enabled the inexpensive preparation of Ga2O3:Mn thin films on large-area thick ceramic sheet insulators. Gallium acethylacetonate, a relatively inexpensive and easy to handle material: was used as the Ga source material. Thin-film electroluminescent (TFEL) devices with a Ga2O3:Mn thin-film emitting layer prepared by the sol-gel process at a deposition temperature of degrees and a postannealing temperature of 1000 degrees C exhibited luminances of 1271 and 401 cd/m(2) when driven at 1 kHz and 60 Hz, respectively.

引用

页码：L524 / L526

页数：3

共 50 条

[1] Electroluminescent Ga2O3:Mn thin films prepared by sol gel process
Minami, T
Miyata, T
Nakatani, T
PHYSICS AND CHEMISTRY OF LUMINESCENT MATERIALS, 2000, 99 (40): : 9 - 16
[2] Fabrication of oxide phosphor thin-film electroluminescent devices using a sol-gel process
Minami, T
Shirai, T
Miyata, T
SMART STRUCTURES AND DEVICES, 2001, 4235 : 476 - 487
[3] Sol-gel prepared β-Ga2O3 thin films for ultraviolet photodetectors
Kokubun, Yoshihiro
Miura, Kasumi
Endo, Fumie
Nakagomi, Shinji
APPLIED PHYSICS LETTERS, 2007, 90 (03)
[4] Multicolor-emitting thin-film electroluminescent devices using Ga2O3 phosphors co-doped with Mn and Cr
Minami, T
Nakatani, T
Miyata, T
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2000, 18 (04): : 1234 - 1238
[5] Comparative Study of High-Temperature Annealed and RTA Process β-Ga2O3 Thin Film by Sol-Gel Process
Bae, Min-Sung
Kim, Seoung-Hyoun
Baek, Jin-Su
Koh, Jung-Hyuk
COATINGS, 2021, 11 (10)
[6] Sm2O3 optical thin film prepared by the sol-gel process
Huang, Jianfeng
Huang, Yan
Cao, Liyun
He, Daoyan
Wu, Jianpeng
He, Haiyan
Kuei Suan Jen Hsueh Pao/ Journal of the Chinese Ceramic Society, 2006, 34 (11): : 1341 - 1344
[7] Mn-activated CaO-Ga2O3 phosphors for thin-film electroluminescent devices
Minami, T
Yamada, H
Kubota, Y
Miyata, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (9AB): : L1191 - L1194
[8] Mn-activated CaO-Ga2O3 phosphors for thin-film electroluminescent devices
Minami, Tadatsugu
Yamada, Hiroyuki
Kubota, Yoshihiro
Miyata, Toshihiro
Japanese Journal of Applied Physics, Part 2: Letters, 1997, 36 (9 A-B):
[9] High-luminance multicolor-emitting thin-film electroluminescent devices using (Y2O3-Ga2O3):Mn phosphors
Minami, T
Miyata, T
Suzuki, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (8B): : L1018 - L1020
[10] High-Luminance Multicolor-Emitting Thin-Film Electroluminescent Devices Using (Y2O3-Ga2O3):Mn Phosphors
Minami, T., 1600, Japan Society of Applied Physics (42):

← 1 2 3 4 5 →