A promising concept to push efficiency of pn-junction photovoltaic solar cell beyond Shockley and Queisser limit based on impact ionization due to high electric field

被引：3

作者：

Falama, Ruben Zieba ^{[1
,2
]}

Hidayatullah ^{[3
]}

Doka, Serge Yamigno ^{[4
]}

机构：

[1] Inst Geol & Min Res, Lab Energy Res, POB 4110, Yaounde, Cameroon

[2] Univ Maroua, Fac Sci, Dept Phys, POB 814, Maroua, Cameroon

[3] Kandahar Univ, Fac Educ, Dept Phys, POB 3801, Kandahar, Afghanistan

[4] Univ Ngaoundere, Fac Sci, Dept Phys, POB 812, Ngaoundere, Cameroon

来源：

OPTIK | 2019年 / 187卷

关键词：

Impact ionization; CM; Photovoltaic silicon solar cell; SCR; Electric field; Efficiency; CARRIER-MULTIPLICATION EFFICIENCY; MULTIPLE EXCITON GENERATION; PBSE; CONVERSION; RATES;

D O I：

10.1016/j.ijleo.2019.04.136

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

This paper studies the implication of impact ionization due to a high electric field on the improvement of the photovoltaic solar cell efficiency. A high electric field existing in the space charge region (SCR) of the solar cell induces the generation of additional free carriers by accelerating the photogenerated electron-hole pairs which collide with the lattice of the semiconductor material. The resultant current taking into account this carriers' multiplication (CM) is calculated and the maximum efficiency of the photovoltaic solar cell is evaluated. The found results show that CM in photovoltaic solar cell occurs in a definite range of the electric field near to the pn-junction and could improve significantly his efficiency for more than 5% at an electric field less than 4 x 10(5) V/cm, depending on the width of the space charge region or the multiplication region. The usable range of the electric field for CM in solar cell is linked to the type of semiconductor material used.

引用

页码：39 / 48

页数：10