Silicon Nanowires: donors, surfaces and interface defects

被引：0
|
作者：
Fanciulli, M. [1 ,2 ]
Paleari, S. [1 ]
Belli, M. [2 ]
Lamperti, A. [2 ]
机构：
[1] Univ Milano Bicocca, Dept Mat Sci, I-20125 Milan, Italy
[2] IMM CNR, MDM Lab, Via C Olivetti 2, I-20864 Agrate Brianza, Italy
来源：
HIGH PURITY AND HIGH MOBILITY SEMICONDUCTORS 14 | 2016年 / 75卷 / 04期
关键词：
ELECTRON-SPIN-RESONANCE; MAGNETIC-RESONANCE; SI NANOWIRES; COMPLEXES; CHARGE; STATES;
D O I：
10.1149/07504.0179ecst
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In the present work we focus on the investigation by electron spin resonance (EPR) and complementary techniques (such as SEM, ToF-SIMS, XPS) of silicon nanowires produced by metal-assisted chemical etching (MACE). In particular we will report on the impact of the MACE process on the donors (P and As) and on surface passivation processes based on H or S. The efficiency of the passivation processes has been monitored by following the EPR signals of the P-b centers at the Si/SiO2 interface.
引用
收藏
页码：179 / 187
页数：9
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