A measurement of the electron-hole pair creation energy and the Fano factor in silicon for 5.9 keV X-rays and their temperature dependence in the range 80-270 K

被引：50
|
作者：
Lowe, B. G. [1 ]
Sareen, R. A. [1 ]
机构：
[1] E2V Sci Ltd, Bucksburn HP10 0AP, Aberdeen, Scotland
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2007年 / 576卷 / 2-3期
关键词：
silicon X-ray detector; Fano factor; electron-hole pair creation energy;
D O I：
10.1016/j.nima.2007.03.020
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
A measurement of the energy omega to create an electron-hole pair and its temperature dependence between 80 and 270 K has been made using a small Si p-i-n diode and 5.9 keV X-rays. A value of 3.73 +/- 0.09 eV with a gradient of -0.0131 +/- 0.0004% K-1 was found. The photo-peak dispersion D was also measured and from the values between 110K and 235K, the product omega F was found to be 0.441 +/- 0.005 eV. This is consistent with a constant Fano factor F of 0.118 +/- 0.004. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：367 / 370
页数：4
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