Preparation of tin disulphide thin films by solution growth

被引：0
|
作者：
Varkey, AJ [1 ]
机构：
[1] Univ Swaziland, Dept Phys, Kwaluseni, Swaziland
来源：
INTERNATIONAL JOURNAL OF MATERIALS & PRODUCT TECHNOLOGY | 1997年 / 12卷 / 4-6期
关键词：
solution growth; thin film; tin disulphide;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A chemical method has been developed for depositing tin disulphide (SnS2) thin films onto glass substrates at room temperature. The films were found to have n type conductivity with optical band gap of about 2.3 eV. Some of the optical and electrical properties of these films were also investigated.
引用
收藏
页码：490 / 495
页数：6
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