Transparent AMOLED display driven by split oxide TFT backplane

被引：12

作者：

Lee, Suhui ^{[1
]}

Chen, Yuanfeng ^{[1
]}

Kim, Jeonggi ^{[1
]}

Kim, Hyo-Min ^{[1
]}

Jang, Jin ^{[1
]}

机构：

[1] Kyung Hee Univ, Dept Informat Display, Adv Display Res Ctr, Seoul 130701, South Korea

来源：

JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY | 2018年 / 26卷 / 03期

关键词：

split; oxide; thin-film transistor (TFT); high mobility; transparent AMOLED; THIN-FILM TRANSISTORS;

D O I：

10.1002/jsid.646

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed stable and high performance etch-stopper amorphous indium-gallium-zinc oxide thin-film transistor (TFT) by using split active oxide semiconductor. The amorphous indium-gallium-zinc oxide TFTs exhibit the mobility as high as over 70cm(2)/Vs and the stable operation under positive bias temperature stress. In this work, we demonstrated a 4-in. transparent active-matrix organic light-emitting diode display using oxide TFT backplane with split active layer, where the gate driver is integrated.

引用

页码：164 / 168

页数：5

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