Ash-induced modification of porous and dense SiCOH inter-level-dielectric (ILD) materials during damascene plasma processing

被引：11

作者：

Dalton, TJ ^{[1
]}

Fuller, N ^{[1
]}

Tweedie, C ^{[1
]}

Dunn, D ^{[1
]}

Labelle, C ^{[1
]}

Gates, S ^{[1
]}

Colburn, M ^{[1
]}

Chen, ST ^{[1
]}

Tai, L ^{[1
]}

Dellaguardia, R ^{[1
]}

Petrarca, K ^{[1
]}

Dziobkowski, C ^{[1
]}

Kumar, K ^{[1
]}

Siddiqui, S ^{[1
]}

机构：

[1] IBM Corp, Semicond Res & Dev Ctr, Div Res, Yorktown Hts, NY 10598 USA

来源：

PROCEEDINGS OF THE IEEE 2004 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2004年

关键词：

D O I：

10.1109/IITC.2004.1345724

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Modification of low-k dielectric materials during photoresist plasma stripping was examined using a variety of analytical techniques. These techniques were initially applied to blanket wafers and were subsequently applied to both specially-designed test structures and product structures on patterned wafers. Results of these experiments are presented and analyzed.

引用

页码：154 / 156

页数：3

共 2 条

[1] Reduction of plasma-induced damage during HDP-CVD oxide deposition in the inter layer dielectric (ILD) process
Lee, Jun-woo
Kim, Hwan-woo
Kim, Hyung-joon
Kim, Seog-gyu
Lee, Kyu-pil
Lee, Soo-cheol
Park, Dong-gun
Choi, Byoung-deog
MICROELECTRONIC ENGINEERING, 2011, 88 (08) : 2489 - 2491
[2] Analysis of plasma-induced modification of ULK and eULK materials:: Dual damascene processing challenges for 45nm (κ≤2.4) and beyond BEOL technologies
Fuller, N. C. M.
Worsley, M. A.
Nitta, S.
Dalton, T.
Tai, T. L.
Bent, S.
Magbitang, T.
Dubois, G.
Miller, R.
Volksen, W.
Sankar, M.
Purushothaman, S.
PROCEEDINGS OF THE IEEE 2006 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2006, : 24 - +

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