Electrical parameters of a DC sputtered Mo/n-type 6H-SiC Schottky barrier diode

被引：9

作者：

Asubay, Sezai ^{[1
]}

Genisel, Mustafa Fatih ^{[2
,3
]}

Ocak, Yusuf Selim ^{[2
,3
]}

机构：

[1] Dicle Univ, Fac Sci, Dept Phys, TR-21280 Diyarbakir, Turkey

[2] Dicle Univ, Fac Educ, Dept Sci, TR-21280 Diyarbakir, Turkey

[3] Dicle Univ, Sci & Technol Applicat & Res Ctr DUBTAM, TR-21280 Diyarbakir, Turkey

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2014年 / 28卷

关键词：

Schottky barrier diode; 6H-SiC; Barrier height; Ideality factor; PULSED-LASER DEPOSITION;

D O I：

10.1016/j.mssp.2014.07.003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A Mo/n-type 6H-SiC/Ni Schottky barrier diode (SBD) was fabricated by sputtering Mo metal on n-type 6H-SiC semiconductor. Before the formation of Mo/n-type 6H-SiC SBD, an ohmic contact was formed by thermal evaporation of Ni on n-type 6H-SiC and annealing at 950 degrees C for 10 min. It was seen that the structure had excellent rectification. The electrical parameters were extracted using its current-voltage (I-V) and capacitance-voltage (C-V) measurements carried out at room temperature. Very high (1.10 eV) barrier height and 1.635 ideality factor values were reported for Mo/n-type 6H-SiC using In plot. The barrier height and series resistance values of the diode were also calculated as 1413 eV and 69 Omega from Norde's functions, respectively. Furthermore, 1.938 eV barrier height value of Mo/n-type 6H-SiC SBD calculated from C-V measurements was larger than the one obtained from I-V data. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：94 / 97

页数：4

共 50 条

[1] Ti Schottky barrier diodes on n-type 6H-SiC
Liu, ZL
Wang, SR
Yu, F
Zhang, YG
Zhao, H
SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS, 2001, : 1183 - 1186
[2] Ideal ohmic contact to n-type 6H-SiC by reduction of Schottky barrier height
Teraji, T
Hara, S
Okushi, H
Kajimura, K
APPLIED PHYSICS LETTERS, 1997, 71 (05) : 689 - 691
[3] Barrier height inhomogeneities in a Ni/SiC-6H Schottky n-type diode
Benmaza, H.
Akkal, B.
Abid, H.
Bluet, J. M.
Anani, M.
Bensaad, Z.
MICROELECTRONICS JOURNAL, 2008, 39 (01) : 80 - 84
[4] Temperature dependent capacitance and DLTS studies of Ni/n-type 6H-SiC Schottky diode
Duman, Songuel
Gur, Emre
Dogan, Seydi
Tuzemen, Sebahattin
CURRENT APPLIED PHYSICS, 2009, 9 (06) : 1181 - 1185
[5] Schottky barrier height of a new ohmic contact NiSi2 to n-type 6H-SiC
Nakamura, T
Satoh, M
SOLID-STATE ELECTRONICS, 2002, 46 (12) : 2063 - 2067
[6] The barrier-height inhomogeneity in identically prepared Ni/n-type 6H-SiC Schottky diodes
S. Duman
S. Dogan
B. Gürbulak
A. Türüt
Applied Physics A, 2008, 91 : 337 - 340
[7] Schottky barrier height modification in Au/n-type 6H-SiC structures by PbS interfacial layer
Gulen, Y.
Ejderha, K.
Nuhoglu, C.
Turut, A.
MICROELECTRONIC ENGINEERING, 2011, 88 (02) : 179 - 182
[8] The barrier-height inhomogeneity in identically prepared Ni/n-type 6H-SiC Schottky diodes
Duman, S.
Dogan, S.
Guerbulak, B.
Tueruet, A.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2008, 91 (02): : 337 - 340
[9] Effect of the contact area on the electrical characteristics of the Ti/6H-SiC (n) Schottky diode
Bekaddour, Abderrahmane
Rabehi, Abdelaziz
Tizi, Schahrazade
Zebentout, Baya
Akkal, Boudali
Benamara, Zineb
MICRO AND NANOSTRUCTURES, 2023, 173
[10] The effects of the temperature and annealing on current-voltage characteristics of Ni/n-type 6H-SiC Schottky diode
Sefaoglu, A.
Duman, S.
Dogan, S.
Guerbulak, B.
Tuezemen, S.
Tueruet, A.
MICROELECTRONIC ENGINEERING, 2008, 85 (03) : 631 - 635

← 1 2 3 4 5 →