Defect-related recombination processes in low-dimensional structures of ZnCdSe/ZnSe, CdTe/CdMnTe and GaAs/AlGaAs

被引：2

作者：

Godlewski, M

Hommel, D

Wojtowicz, T

Karczewski, G

Kossut, J

Reginski, K

Bugajski, M

Bergman, JP

Monemar, B

机构：

[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[2] Univ Bremen, Inst Solid State Phys, D-28334 Bremen, Germany

[3] Inst Electron Technol, PL-02668 Warsaw, Poland

[4] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden

来源：

DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3 | 1997年 / 258-2卷

关键词：

defects in heterostructures; II-VI and III-V semiconductors; bound excitons;

D O I：

10.4028/www.scientific.net/MSF.258-263.1665

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The two-line structure of the photoluminescence (PL) emission from quantum wells (QWs) of nominally undoped II-VI and III-V semiconductors is often related to a simultaneous observation of free and bound (typically neutral donor bound) excitons. In this work we discuss defect-related recombination processes in doped and undoped quantum well structures of II-VI and m-V semiconductors. We show that trapping of free excitons by donor impurities is relatively inefficient in typical quantum well structures, which show at low temperature pi, emission of either localized (by potential fluctuations) or quasi-localized excitons. Bound excitons are preferentially formed in such structures under excitation conditions which generates free electrons and holes.

引用

页码：1665 / 1670

页数：6

共 9 条

[1] Defect-related recombination processes in low-dimensional structures of ZnCdSe/ZnSe, CdTe/CdMnTe and GaAs/AlGaAs
Godlewski, M.
Hommel, D.
Wojtowicz, T.
Karczewski, G.
Kossut, J.
Reginski, K.
Bugajski, M.
Bergman, J.P.
Monemar, B.
Materials Science Forum, 1997, 258-263 (pt 3): : 1665 - 1670
[2] Dynamics of exciton recombination in low-dimensional heterostructures of II-VI semiconductors (CdTe/CdMnTe, ZnCdSe/ZnSe)
Godlewski, M
JOURNAL OF LUMINESCENCE, 1998, 76-7 : 174 - 180
[3] Defect-related current instabilities in InAs/GaAs and AlGaAs/GaAs structures?
Horváth, ZJ
Franchi, S
Bosacchi, A
Frigeri, P
Gombia, E
Mosca, R
Van Tuyen, V
GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY, 2002, 82-84 : 565 - 568
[4] Photoreflectance spectroscopy of low-dimensional GaAs/AlGaAs structures
Sek, G
Misiewicz, J
Cheng, TS
ADVANCED MATERIALS FOR OPTICS AND ELECTRONICS, 1997, 7 (05): : 241 - 247
[5] Microwave-enhanced exciton delocalisation in low-dimensional CdTe/CdMnTe and CdMnTe/CdMgTe quantum well structures
Godlewski, M
Ivanov, VY
Khachapuridze, A
BULLETIN OF THE POLISH ACADEMY OF SCIENCES-CHEMISTRY, 2000, 48 (04): : 347 - 354
[6] MBE fabrication of GaAs/AlGaAs low-dimensional structures on in situ patterned GaAs substrates
Ishikawa, T
Lopez, M
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 1996, 10 (27): : 3637 - 3648
[7] Kinetic of recombination processes involving defect-related states in as-grown Si-doped GaAsN/GaAs epilayer
Zaaboub, Z.
Hassen, F.
Maaref, H.
SOLID STATE COMMUNICATIONS, 2020, 314
[8] GaAs/AlGaAs quantum wire lasers and other low-dimensional structures fabricated by cleaved edge overgrowth
Wegscheider, W
Pfeiffer, LN
West, KW
ADVANCES IN SOLID STATE PHYSICS, VOL 35, 1996, 35 : 155 - 174
[9] NOVEL IN-SITU ELECTROCHEMICAL TECHNOLOGY FOR FORMATION OF OXIDE-FREE AND DEFECT-FREE SCHOTTKY CONTACT TO GAAS AND RELATED LOW-DIMENSIONAL STRUCTURES
HASHIZUME, T
SCHWEEGER, G
WU, NJ
HASEGAWA, H
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (04): : 2660 - 2666

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