Luminescence of silicon nitride films implanted with nitrogen ions

被引：7

作者：

Vlasukova, L. ^{[1
]}

Parkhomenko, I ^{[1
]}

Komarov, F. ^{[1
]}

Akilbekov, A. ^{[2
]}

Murzalinov, D. ^{[3
]}

Mudryi, A. ^{[4
]}

Ryabikin, Y. ^{[5
]}

Romanov, I ^{[1
]}

Giniyatova, Sh ^{[2
]}

Dauletbekova, A. ^{[2
]}

机构：

[1] Belarusian State Univ, Nezavisimosti Ave 4, Minsk 220030, BELARUS

[2] LN Gumilyov Eurasian Natl Univ, Satpayev Str 2, Astana 010008, Kazakhstan

[3] Saken Seifullin Kazakh Agro Tech Univ, Zhenis Ave 62, Astana 010011, Kazakhstan

[4] Natl Acad Sci Belarus, Sci & Pract Mat Res Ctr, Brovki Str 17, Minsk 220072, BELARUS

[5] Inst Nucl Phys, Ibragimov Str 1, Alma Ata 050032, Kazakhstan

来源：

MATERIALS RESEARCH EXPRESS | 2018年 / 5卷 / 09期

关键词：

amorphous silicon nitride; implantation of nitrogen ions; heat treatment; N-centers; photoluminescence; PHOTOLUMINESCENCE;

D O I：

10.1088/2053-1591/aad7a6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photoluminescence and electron paramagnetic resonance of LPCVD silicon nitride films implanted with nitrogen ions and annealed at 800 and 1200 degrees C were studied. It was shown for the initial nitride film that rapid thermal annealing for 3 min at 800 degrees C leads to a decrease in the luminescence signal, while annealing at 1200 degrees C leads to an increase in the luminescence intensity in the blue-green region. Implantation of nitrogen ions leads to complete quenching of the luminescence signal, which is most likely due to radiation damage. However, a preliminary nitrogen implantation with a fluence of 1 x 10(16) cm(-2) followed by annealing at 1200 degrees C enhances the luminescence in the blue-green region. It confirms the contribution of amorphous silicon nitride intrinsic defects (N-centers) to the luminescence in the high-energy region of the spectrum.

引用

页数：6

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