Investigation of the Crystallization Kinetics in the Phase Change Memory Materials of Ge-Sb-Te System

被引：0
|
作者：
Sherchenkov, A. [1 ]
Kozyukhin, S. [2 ]
Babich, A. [1 ]
Lazarenko, P. [1 ]
Timoshenkov, S. [1 ]
Shuliatyev, A. [1 ]
Baranchikov, A. [2 ]
机构：
[1] Natl Res Univ Elect Technol, Bld 1,Shokin Sq, Moscow, Russia
[2] Russian Acad Sci, Kurnakov Inst Gen & Inorgan Chem, 31 Leninsky Prospect, Moscow, Russia
来源：
3RD INTERNATIONAL CONGRESS ON ENERGY EFFICIENCY AND ENERGY RELATED MATERIALS (ENEFM2015) | 2017年
关键词：
Phase change memory; Crystallization kinetics; Ge-Sb-Te system;
D O I：
10.1007/978-3-319-45677-5_32
中图分类号：
X [环境科学、安全科学];
学科分类号：
08 ; 0830 ;
摘要：
In this work mechanism and kinetics of crystallization for thin films on the basis of Ge-Sb-Te-Bi and Ge-Sb-Te-In perspective for phase change memory application were investigated. Possible data processing and storage times of the PCM cell were estimated. It was shown that PCM cell based on Ge2Sb2Te5 + 0.5 wt% Bi have minimum data processing and maximum data storage times in comparison with the other investigated materials.
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页数：7
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