DM Interference Propagation Mathematical Modeling in SiC Wirebond Multichip Power Module

被引：0
|
作者：
Chen, Xiliang [1 ]
Chen, Wenjie [1 ]
Ren, Yu [2 ]
Yang, Xu [1 ]
Qiao, Liang [3 ]
机构：
[1] Xi An Jiao Tong Univ, Dept Elect Engn, Xian 710049, Peoples R China
[2] Taiyuan Univ Technol, Shanxi Key Lab Power Syst Operat & Control, Taiyuan 030024, Peoples R China
[3] Univ Tennessee, Elect Engn & Comp Sci Dept, Knoxville, TN 37996 USA
来源：
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS | 2021年 / 68卷 / 06期
基金：
中国国家自然科学基金;
关键词：
Silicon carbide; MOSFET; Couplings; Electromagnetic interference; Mathematical model; Capacitors; Multichip modules; SiC MOSFET; parallel-connected; mathematical modeling; inductive coupling; EMI; differential-mode interference; decoupling capacitors; NOISE;
D O I：
10.1109/TCSII.2020.3041675
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this brief, a novel differential-mode (DM) interference propagation mathematical modeling method based on parasitic inductive coupling theory for SiC wirebond multichip power module (SWMPM) with adjacent decoupling capacitor is proposed. Based on the proposed model, the strong and weak inductive coupling theory of DM interference equivalent circuit is proposed. And the influence of different position of decoupling capacitors on DM equivalent current is mathematically analyzed. A custom-made 1.2kV 160A power module based on DM interference optimized layout is built. It is compared with a commercial SiC power module, which can verify the feasibility and validity of the theoretical analysis.
引用
收藏
页码：2077 / 2081
页数：5
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