Light-Emitting-Diodes based on ordered InGaN nanocolumns emitting in the blue, green and yellow spectral range

被引：19
|
作者：
Bengoechea-Encabo, A. [1 ]
Albert, S. [1 ]
Lopez-Romero, D. [1 ]
Lefebvre, P. [2 ]
Barbagini, F. [1 ]
Torres-Pardo, A. [3 ,4 ]
Gonzalez-Calbet, J. M. [3 ]
Sanchez-Garcia, M. A. [1 ]
Calleja, E. [1 ]
机构：
[1] Univ Politecn Madrid, ETSIT, ISOM Dept Ing Elect, E-28040 Madrid, Spain
[2] CNRS, Lab Charles Coulomb L2C, UMR5221, F-34095 Montpellier, France
[3] Univ Complutense, Dept Quim Inorgan, E-28040 Madrid, Spain
[4] UPM, UCM, Madrid, Spain
来源：
NANOTECHNOLOGY | 2014年 / 25卷 / 43期
关键词：
InGaN; nanocolumns; LED; SAG; QUANTUM-WELL; EFFICIENCY;
D O I：
10.1088/0957-4484/25/43/435203
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The growth of ordered arrays of InGaN/GaN nanocolumnar light emitting diodes by molecular beam epitaxy, emitting in the blue (441 nm), green (502 nm), and yellow (568 nm) spectral range is reported. The device active region, consisting of a nanocolumnar InGaN section of nominally constant composition and 250 to 500 nm length, is free of extended defects, which is in strong contrast to InGaN (planar) layers of similar composition and thickness. Electroluminescence spectra show a very small blue shift with increasing current (almost negligible in the yellow device) and line widths slightly broader than those of state-of-the-art InGaN quantum wells.
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页数：7
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