THE LINE EDGE ROUGHNESS IMPROVEMENT WITH PLASMA COATING FOR 193NM LITHOGRAPHY

被引：0
|
作者：
Zheng, Erhu [1 ]
Zhang, Haiyang [1 ]
Zhang, Yiying [1 ]
机构：
[1] Semicond Mfg Int Corp, Technol R&D, Shanghai 201203, Peoples R China
来源：
2017 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC 2017) | 2017年
关键词：
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Incorporation of self-aligned multiple patterning (SaMP) techniques have had limited uses in the industry due to a number of issues including: pitching walking, initial line width roughness (LWR) of photoresist, line edge roughness (LER) degradation of subsequent layer patterning. Utilizing plasma coating for PR hardening is attractive for 193nm lithography application. This paper presents the design of experiments (DOE) to optimize the parameters of pressure, RF power and chemistry ratio to achieve the optimal condition on the LER improvement. As a result, the LER of 1st layer is improved 32% at dense pattern region comparing to initial condition.
引用
收藏
页数：3
相关论文
共 50 条
  • [1] The Line Roughness Improvement with Plasma Coating and Cure Treatment for 193nm Lithography and Beyond
    Zheng, Erhu
    Huang, Yi
    Zhang, Haiyang
    [J]. ADVANCED ETCH TECHNOLOGY FOR NANOPATTERNING VI, 2017, 10149
  • [2] Antireflective coating strategies for 193nm lithography
    Stephen, A
    Dean, K
    Byers, J
    [J]. MICROLITHOGRAPHY 1999: ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVI, PTS 1 AND 2, 1999, 3678 : 1315 - 1322
  • [3] Line edge roughness reduction for advanced metal gate etch with 193nm lithography in a silicon decoupled plasma source etcher (DPSII)
    Chowdhury, T
    Bamnolker, H
    Yang, RKCL
    Lee, HC
    Du, Y
    Shen, MH
    Choi, JH
    Deshmukh, S
    [J]. ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XX, PTS 1 AND 2, 2003, 5039 : 240 - 248
  • [4] Top antireflective coating process for 193nm lithography
    Takano, Y
    Ijima, K
    Akiyama, Y
    Takaka, H
    [J]. MICROPROCESSES AND NANOTECHNOLOGY 2001, DIGEST OF PAPERS, 2001, : 136 - 136
  • [5] SiON based antireflective coating for 193nm lithography
    Schiavone, P
    Esclopé, C
    Halimaoui, A
    [J]. MICROLITHOGRAPHY 1999: ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVI, PTS 1 AND 2, 1999, 3678 : 1091 - 1095
  • [6] Rinse additives for line edge roughness control in 193 nm lithography
    Goldfarb, DL
    Burns, SD
    Burns, RL
    Brodsky, CJ
    Lawson, MC
    Angelopoulos, M
    [J]. ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XXI, PTS 1 AND 2, 2004, 5376 : 343 - 351
  • [7] Line edge roughness in 193nm resists: Lithographic aspects and etch transfer
    Wallow, Thomas
    Acheta, Alden
    Ma, Yuansheng
    Pawloski, Adam
    Bell, Scott
    Ward, Brandon
    Tabery, Cyrus
    La Fontaine, Bruno
    Kim, Ryoung-han
    McGowan, Sarah
    Levinson, Harry J.
    [J]. ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXIV, 2007, 6519
  • [8] Acid diffusion characteristics of RELACSTM coating for 193nm lithography
    Hong, S
    Nishibe, T
    Okayasu, T
    Takahashi, K
    Takano, Y
    Kang, W
    Tanaka, H
    [J]. ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XXI, PTS 1 AND 2, 2004, 5376 : 285 - 293
  • [9] Effects of different processing conditions on line edge roughness for 193nm and 157nm resists
    Ercken, M
    Leunissen, LHA
    Pollentier, I
    Patsis, GP
    Constantoudis, V
    Gogolides, E
    [J]. METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XVIII, PTS 1 AND 2, 2004, 5375 : 266 - 275
  • [10] Advances in 193nm lithography tools
    Cote, D
    Ahouse, D
    Galburt, D
    Harrold, H
    Kreuzer, J
    Nelson, M
    Oskotsky, M
    O'Connor, G
    Sewell, H
    Williamson, D
    Zimmerman, J
    Zimmerman, R
    [J]. OPTICAL MICROLITHOGRAPHY XIII, PTS 1 AND 2, 2000, 4000 : 542 - 550
12345