Room temperature observation of biexcitons in exfoliated WS2 monolayers

被引:57
|
作者
Paradisanos, I. [1 ,2 ]
Germanis, S. [1 ]
Pelekanos, N. T. [1 ,3 ]
Fotakis, C. [1 ,2 ]
Kymakis, E. [1 ,4 ,5 ]
Kioseoglou, G. [1 ,3 ]
Stratakis, E. [1 ,3 ]
机构
[1] Fdn Res & Technol Hellas, Inst Elect Struct & Laser, Iraklion 71110, Crete, Greece
[2] Univ Crete, Dept Phys, Iraklion 71003, Crete, Greece
[3] Univ Crete, Dept Mat Sci & Technol, Iraklion 71003, Crete, Greece
[4] Technol Educ Inst TEI Crete, Ctr Mat Technol & Photon, Iraklion 71004, Greece
[5] Technol Educ Inst TEI Crete, Elect Engn Dept, Iraklion 71004, Greece
关键词
PHOTOLUMINESCENCE; NANOSHEETS; TRIONS; STATES; MOS2;
D O I
10.1063/1.4983285
中图分类号
O59 [应用物理学];
学科分类号
摘要
Single layers of WS2 are direct gap semiconductors with high photoluminescence (PL) yield holding great promise for emerging applications in optoelectronics. The spatial confinement in a two-dimensional monolayer together with the weak dielectric screening leads to huge binding energies for the neutral excitons as well as other excitonic complexes, such as trions and biexcitons whose binding energies scale accordingly. Here, we report on the existence of biexcitons in mechanically exfoliated WS2 flakes from 78K up to room temperature. Performing temperature and power dependent PL measurements, we identify the biexciton emission channel through the superlinear behavior of the integrated PL intensity as a function of the excitation power density. On the contrary, neutral and charged excitons show a linear to sublinear dependence in the whole temperature range. From the energy difference between the emission channels of the biexciton and neutral exciton, a biexciton binding energy of 65-70 meV is determined. Published by AIP
引用
收藏
页数:5
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