Effect of thermal annealing on optical and photoelectric properties of microcrystalline hydrogenated silicon films

被引：1
|
作者：
Kazanskii, AG [1 ]
Mell, H
Forsh, PA
机构：
[1] Moscow MV Lomonosov State Univ, Moscow 119899, Russia
[2] Univ Marburg, Fachbereich Phys, D-35032 Marburg, Germany
来源：
SEMICONDUCTORS | 2003年 / 37卷 / 02期
关键词：
D O I：
10.1134/1.1548670
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The effect of thermal annealing in the temperature range T-a=300-600degreesC of films of microcrystalline hydrogenated silicon (muc-Si:H) lightly doped with boron on the spectral dependences of the absorption coefficient (alpha) at photon energies hnu=0.8-2.0 eV, dark conductivity (sigma(d)), and photoconductivity (Deltasigma(ph)) was studied at room temperature. With increasing annealing temperature, a nonmonotonic variation of alpha (at hnu<1.2 eV), sigma(d), and Deltasigma(ph) was observed. The data obtained are attributed to a change in the concentration of electrically active impurities and formation of defects, caused by hydrogen effusion and bond restructuring at high annealing temperatures. (C) 2003 MAIK "Nauka/Interperiodica".
引用
收藏
页码：224 / 226
页数：3
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