Design of Integrated Transformer and Inductor for High Frequency Dual Active Bridge GaN Charger for PHEV

This paper discusses the design of high power density transformer and inductor for the high frequency dual active bridge (DAB) GaN charger. Because the charger operates at 500 kHz, the inductance needed to achieve ZVS for the DAB converter is reduced to as low as 3 mu H. As a result, it is possible to utilize the leakage inductor as the series inductor of DAB converter. To create such amount of leakage inductance, certain space between primary and secondary winding is allocated to store the leakage flux energy. The designed transformer is above 99.2% efficiency while delivering 3.3kW. The power density of the designed transformer is 6.3 times of the lumped transformer and inductor in 50 kHz Si Charger. The detailed design procedure and loss analysis are discussed.