Electrical rectification in a Langmuir-Blodgett monolayer of dimethyanilinoazafullerene sandwiched between gold electrodes

被引:95
|
作者
Metzger, RM
Baldwin, JW
Shumate, WJ
Peterson, IR
Mani, P
Mankey, GJ
Morris, T
Szulczewski, G
Bosi, S
Prato, M
Comito, A
Rubin, Y
机构
[1] Univ Alabama, Dept Chem, Lab Mol Elect, Tuscaloosa, AL 35487 USA
[2] Univ Alabama, Dept Phys, Tuscaloosa, AL 35487 USA
[3] Univ Trieste, Dipartimento Sci Farmaceut, I-34127 Trieste, Italy
[4] Univ Calif Los Angeles, Dept Chem & Biochem, Los Angeles, CA 90095 USA
来源
JOURNAL OF PHYSICAL CHEMISTRY B | 2003年 / 107卷 / 04期
关键词
D O I
10.1021/jp022101k
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Asymmetries were observed across a monolayer of dimethylanilinoaza[C-60]fullerene, (DMA-NC60, 1) sandwiched between gold electrodes of relatively large size (0.265 mm(2)). Two modes of behavior are observed: (1) a sigmoidal and slightly asymmetric behavior, bespeaking of a moderate unimolecular rectifier (rectification ratio of about 2), and (2) above a threshold voltage V-1 (approximate to0.6 to 1.0 V), a dramatic increase of current to 0.3 to 1 A (as high as 1.36 x 10(7) electrons molecule(-1) s(-1) at 1.5 V), followed by ohmic behavior from V-1 to a relatively smaller negative bias V-2 (approximate to -0.5 V to -0.6 V). At more negative potentials (e.g., at - 1.5 V) the current is very small (a few muA). This high asymmetry in current persists for between 10 and 20 cycles of voltage scan. This increased, but ohmic conductivity is probably due to defects that grow at domain boundaries, since this behavior is not seen when very small electrodes (1 mum(2) area) are used. The defects could be stalagmitic filaments of gold. which grow from the bottom electrode above V-1 but are broken at the negative bias V-2, or else they could be due to some unknown electrochemical couple. This device is vaguely reminiscent of Zener diodes or varistors: if operated between, say, + 2 V and -2 V, it is a super-rectifier, with a rectification ratio of up to 20 000 at 1.5 V.
引用
收藏
页码:1021 / 1027
页数:7
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