Influence of initial GaAs and A1As cap layers on InAs quantum dots grown by molecular beam epitaxy

被引：33
|
作者：
Ferdos, F [1 ]
Wang, SM
Wei, YQ
Sadeghi, M
Zhao, QX
Larsson, A
机构：
[1] Chalmers Univ Technol, Photon Inst, Dept Microelect, S-41296 Gothenburg, Sweden
[2] Chalmers Univ Technol, Microtechnol Ctr, S-41296 Gothenburg, Sweden
[3] Chalmers Univ Technol, Dept Microelect & Nanosci, S-41296 Gothenburg, Sweden
来源：
JOURNAL OF CRYSTAL GROWTH | 2003年 / 251卷 / 1-4期
关键词：
capping layer; surface morphology; InAs quantum dots;
D O I：
10.1016/S0022-0248(02)02471-5
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Capping of InAs quantum dots (QDs) with AlAs or GaAs causes a significant change in the structural properties of the QDs. However, there is a basic difference between these two capping materials. The GaAs capping causes a dramatic reduction of the dot density and height. AlAs capping, on the other hand, results in a partly suppressed height reduction and a higher dot density. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：145 / 149
页数：5
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