New developments and old problems in grid generation and adaptation for TCAD applications

被引:0
|
作者
Krause, J [1 ]
Schmithüsen, B
Villablanca, L
Fichtner, W
机构
[1] ETH Zurich, Swiss Fed Inst Technol, Integrated Syst Lab, Zurich, Switzerland
[2] ISE AG, Zurich, Switzerland
关键词
mesh quality; normal offsetting; grid adaptation; moving boundary problem;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present several challenging gridding problems for multi-dimensional device and process simulation and discuss how new strategies might contribute to their solution. Formulating grid quality requirements for the standard Scharfetter-Gummel box method discretization in device simulation, we demonstrate how the offsetting techniques compares with quadtree grid generation methods and how they apply to modern device designs. Further we present a grid adaptation approach which respects the grid quality criteria and touch upon the main adaptation difficulties within device simulation. For the 3D moving boundary grids in process simulation we present a new algorithm.
引用
收藏
页码:1331 / 1337
页数:7
相关论文
共 50 条