Applying uniform reversible strain to epitaxial oxide films

被引：80

作者：

Biegalski, M. D. ^{[1
]}

Doerr, K. ^{[2
]}

Kim, D. H. ^{[3
]}

Christen, H. M. ^{[1
]}

机构：

[1] Oak Ridge Natl Lab, CNMS, Oak Ridge, TN 37830 USA

[2] IFW Dresden, Inst Metall Mat, D-01171 Dresden, Germany

[3] Tulane Univ, Dept Phys & Engn Phys, New Orleans, LA 70118 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 15期

关键词：

bismuth compounds; epitaxial layers; lanthanum compounds; lattice constants; Poisson ratio; strontium compounds; X-ray diffraction; THIN-FILMS;

D O I：

10.1063/1.3374323

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate using four-circle x-ray diffraction that the piezoelectric substrate of Pb(Mg1/3Nb2/3)(0.72)Ti0.28O3(001) induces uniform reversible in-plane strain to epitaxially-grown oxide films and bilayers. The biaxial in-plane strain depends linearly on the applied electrical voltage. Utilizing the reversible strain, the strain-dependent lattice structure and the Poisson number characterizing the elastic response is determined for 200 nm thick SrTiO3, LaScO3, and BiFeO3 films. The uniformity and reversibility of the strain provides access to the direct quantitative measurement of strain-dependent properties of epitaxial oxide films.

引用

页数：3

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