Transfer of InP-based HBV epitaxy onto borosilicate glass substrate by anodic bonding

被引：3

作者：

Dastjerdi, M. H. T. ^{[1
]}

Sanz-Velasco, A. ^{[1
]}

Vukusic, J. ^{[1
]}

Sadeghi, M. ^{[1
]}

Stake, J. ^{[1
]}

机构：

[1] Chalmers, Dept Microtechnol & Nanosci MC2, SE-41296 Gothenburg, Sweden

来源：

ELECTRONICS LETTERS | 2010年 / 46卷 / 14期

关键词：

HETEROSTRUCTURE BARRIER VARACTORS; COPPER SUBSTRATE; DIODES;

D O I：

10.1049/el.2010.0760

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new fabrication process is presented for epitaxial transfer of InP-based heterostructure barrier varactor diodes, as high-frequency varactor multipliers, onto low-dielectric borosilicate glass substrate, employing anodic bonding. The fabricated diodes on the new host substrate display symmetric electrical characteristics with only minor differences compared to those of the reference devices on the original InP substrate.

引用

页码：1013 / U80

页数：2

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