Statistical description of the motion of dislocation kinks in a random field of impurities adsorbed by a dislocation

被引:3
|
作者
Petukhov, B. V. [1 ]
机构
[1] Russian Acad Sci, AV Shubnikov Crystallog Inst, Moscow 119333, Russia
关键词
STOCHASTIC TRANSPORT; ANOMALOUS DIFFUSION; SILICON; SYSTEMS; CRYSTALS; DYNAMICS; MOBILITY;
D O I
10.1134/S1063776110010061
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
A model has been proposed for describing the influence of impurities adsorbed by dislocation cores on the mobility of dislocation kinks in materials with a high crystalline relief (Peierls barriers). The delay time spectrum of kinks at statistical fluctuations of the impurity density has been calculated for a sufficiently high energy of interaction between impurities and dislocations when the migration potential is not reduced to a random Gaussian potential. It has been shown that fluctuations in the impurity distribution substantially change the character of the migration of dislocation kinks due to the slow decrease in the probability of long delay times. The dependences of the position of the boundary of the dynamic phase transition to a sublinear drift of kinks x ae t(delta) (delta sigma 1) and the characteristics of the anomalous mobility on the physical parameters (stress, impurity concentration, experimental temperature, etc.) have been calculated.
引用
收藏
页码:41 / 48
页数:8
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