GaAs pin-photodiodes with an AlGaInP window layer for use in 650-nm wavelength GI-POF data links

被引：2

作者：

Hayashi, M ^{[1
]}

Tsuji, M ^{[1
]}

Makita, K ^{[1
]}

Nyu, T ^{[1
]}

Yamazaki, S ^{[1
]}

Sugita, K ^{[1
]}

Taguchi, K ^{[1
]}

机构：

[1] NEC CORP LTD,COMPOUND SEMICOND DEVICE DIV,KAWASAKI,KANAGAWA 211,JAPAN

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1996年 / 8卷 / 06期

关键词：

D O I：

10.1109/68.502110

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaAs pin-photodiodes (PIN-PD's) with a wide bandgap AlGaInP window layer were demonstrated for a graded-index plastic optical fiber (GI-POF) data link at a wavelength of 650 nm as a high-speed and low-bias operation receiver, High quantum efficiency of over 80% was obtained in the wavelength range from 600 to 850 nn, A 3-dB bandwidth of 4.3 GHz was achieved in 90 mu m phi PIN-PD's. High speed operation up to 600 Mb/s in 210 mu m phi PIN-PD's was demonstrated under the bias free condition.

引用

页码：833 / 835

页数：3