Controlling polariton coupling in intersubband microcavities

被引：0
|
作者：
Anappara, Aji A. [1 ]
Barate, David
Tredicucci, Alessandro [1 ]
Blasiol, Giorgio [2 ]
Sorba, Lucia [2 ,3 ]
Devenson, Jan
Teissier, Roland
Baranov, Alexei
机构：
[1] NEST, CNR, INFM, Piazza Dei Cavalieri 7, I-56126 Pisa, Italy
[2] NEST CNR INFM, Lab Natl, I-34012 Trieste, Italy
[3] Univ Modena & Reggio Emilia, I-41100 Modena, Italy
来源：
PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2007年 / 893卷
关键词：
intersubband transitions; semiconductor microcavity; cavity-polaritons; ultra-strong coupling;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We demonstrate the external control of the intersubband polariton coupling in a GaAs/AlGaAs microcavity, utilizing the electronic tunneling between energetically aligned ground states of an asymmetric coupled quantum well structure. We suggest this scheme as the basic element for the ultrafast manipulation of the polariton ground state. Preliminary results of intersubband polaritons in InAs-AlSb microcavities, towards the realization of the ultra-strong coupling regime, are also reported.
引用
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页码：523 / +
页数：2
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