The Study on the Key Hardware Development of Single-Phase Photovoltaic Grid-Connected Inverters

被引:0
|
作者
Ma, Lei [1 ]
Sun, Jian [2 ]
Yang, Xiaomei [3 ]
Sang, Bingyu [4 ]
Lin, Yandan [1 ]
机构
[1] Fudan Univ, Dept Illuminating Engn & Light Sources, Shanghai 200433, Peoples R China
[2] Univ Sydney, Fac Engn & Informat Technol, Sydney, NSW 2006, Australia
[3] State Grid Jiangsu Elect Power Co Ltd, 215 Shanghai Rd, Nanjing 211106, Jiangsu, Peoples R China
[4] China Elect Power Res Inst, Nanjing Branch, Nanjing 210003, Jiangsu, Peoples R China
基金
中国国家自然科学基金;
关键词
D O I
10.1088/1755-1315/267/4/042043
中图分类号
X [环境科学、安全科学];
学科分类号
08 ; 0830 ;
摘要
High-efficiency inverter topology design on single-phase photovoltaic grid-connected equipment is the core of bringing considerable benefits to the society and the investors. In order to study the key hardware design of the inverter that meets the leakage current requirement and achieve the maximum efficiency, this paper analyses the H-bridge based topology (H5 and H6) and DPB topology. Firstly, this paper discusses the working principle of these topologies and concludes that the DPB topology involves fewer MOSFETs than the H-bridge based topology. Additional studies of power device analysis and other component losses in these topologies have concluded that DPB topology typically has lower power device losses at different load ratios. For instance, when the load ratio (Po / Pe) is 100, the power device loss of the H5 topology is 77 W, and the loss of the H6 topology is 68.7 W. Under the same conditions, the loss of the power device in the DPB topology is only 53.6 W.
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页数:8
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