Electronic transport properties of the charge ordered manganite-based heterojunction

被引：2
|
作者：
Liang, S. [1 ]
Sun, J. R.
Chen, Y. Z.
Lv, W. M.
Shen, B. G.
机构：
[1] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
来源：
SOLID STATE COMMUNICATIONS | 2010年 / 150卷 / 13-14期
基金：
中国国家自然科学基金;
关键词：
Manganite; Heterojunction; Charge order; MAGNETIC-FIELD; JUNCTION;
D O I：
10.1016/j.ssc.2009.12.037
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The charge ordered Bi(0.4)Ca(0.4)Sr(0.2)MnO(3) (BCSMO) film has been grown on (011) SrTiO(3): Nb (STON) (0.05 wt%) substrate. The charge ordering (CO) transition is realized at similar to 336 K. The BCSMO/STON heterojunction shows excellent rectifying behavior. Through the capacitance measure of the junction, it is found that the built-in potential of the heterojunction is affected by the CO transition. A upward shift of the built-in potential of the junction appears around the CO transition temperature, which is ascribed to the change of the Fermi level in BCSMO film. (C) 2010 Elsevier Ltd. All rights reserved.
引用
收藏
页码：609 / 612
页数：4
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