Titanium-induced germanium nanocones synthesized by vacuum electron-beam evaporation: growth mechanism and morphology evolution

被引：11
|
作者：
Wan, Q [1 ]
Li, G
Wang, TH
Lin, CL
机构：
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China
[2] Shanghai Jiao Tong Univ, Shanghai 200050, Peoples R China
[3] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China
来源：
SOLID STATE COMMUNICATIONS | 2003年 / 125卷 / 09期
关键词：
Ge nanocones; Ti nanocrystals; electron-beam evaporation;
D O I：
10.1016/S0038-1098(02)00827-X
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
High-vacuum electron-beam evaporation method is used for large area, metal-nucleated germanium (Ge) nanodots and nanocones on Si3N4/Si preparation. Nanodot and nanocone arrays with uniform size in bulk-quantity are synthesized using titanium (Ti) nanocrystals as nucleating center at 750degreesC with different Ge deposition amount, respectively. The morphology evolution from nanodot to nanocone is studied by atomic force microscopy (AFM). The structure of the prepared sample is characterized by X-ray diffraction (XRD) and Raman scattering. Ge nanocones formed by this convenient fabrication process could have potential applications on nanoelectronics and vacuum electron field emission. (C) 2003 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：503 / 507
页数：5
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