Dual behavior of antiferromagnetic uncompensated spins in NiFe/IrMn exchange biased bilayers

被引:49
|
作者
Mishra, S. K. [1 ]
Radu, F. [1 ]
Valencia, S. [1 ]
Schmitz, D. [1 ]
Schierle, E. [1 ]
Duerr, H. A. [1 ]
Eberhardt, W. [1 ]
机构
[1] Helmholtz Zentrum Mat & Energie, D-12489 Berlin, Germany
关键词
LAYERED MAGNETIC-STRUCTURES; ANISOTROPY; FILMS; MAGNETORESISTANCE; DEPENDENCE;
D O I
10.1103/PhysRevB.81.212404
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present a comprehensive study of the exchange bias effect in a model system. Through numerical analysis of the exchange bias and coercive fields as a function of the antiferromagnetic layer thickness we deduce the absolute value of the averaged anisotropy constant of the antiferromagnet. We show that the anisotropy of IrMn exhibits a finite size effect as a function of thickness. The interfacial spin disorder involved in the data analysis is further supported by the observation of the dual behavior of the interfacial uncompensated spins. Utilizing soft x-ray resonant magnetic reflectometry we have observed that the antiferromagnetic uncompensated spins are dominantly frozen with nearly no rotating spins due to the chemical intermixing, which correlates to the inferred mechanism for the exchange bias.
引用
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页数:4
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