Colloidal PbS nanoplatelets synthesized via cation exchange for electronic applications

被引:23
|
作者
Sonntag, Luisa [1 ]
Shamraienko, Volodymyr [1 ]
Fan, Xuelin [1 ]
Khoshkhoo, Mahdi Samadi [1 ]
Kneppe, David [2 ]
Koitzsch, Andreas [3 ]
Gemming, Thomas [3 ]
Hiekel, Karl [1 ]
Leo, Karl [2 ]
Lesnyak, Vladimir [1 ]
Eychmueller, Alexander [1 ]
机构
[1] Tech Univ Dresden, Phys Chem, Bergstr 66b, D-01062 Dresden, Germany
[2] Tech Univ Dresden, Dresden Integrated Ctr Appl Phys & Photon Mat IAP, Nothnitzer Str 61, D-01187 Dresden, Germany
[3] IFW Dresden, Leibniz Inst Solid State & Mat Res, Helmholtzstr 20, D-01069 Dresden, Germany
关键词
SURFACE-PLASMON RESONANCE; ZN-S NANOCRYSTALS; QUANTUM DOTS; LIGAND-EXCHANGE; PHASE; NANOPARTICLES; NANOSHEETS; HETEROSTRUCTURES; TRANSFORMATIONS; FABRICATION;
D O I
10.1039/c9nr02437a
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
In this work, we present a new synthetic approach to colloidal PbS nanoplatelets (NPLs) utilizing a cation exchange (CE) strategy starting from CuS NPLs synthesized via the hot-injection method. Whereas the thickness of the resulting CuS NPLs was fixed at approx. 5 nm, the lateral size could be tuned by varying the reaction conditions, such as time from 6 to 16 h, the reaction temperature (120 degrees C, 140 degrees C), and the amount of copper precursor. In a second step, Cu+ cations were replaced with Pb2+ ions within the crystal lattice via CE. While the shape and the size of parental CuS platelets were preserved, the crystal structure was rearranged from hexagonal covellite to PbS galena, accompanied by the fragmentation of the monocrystalline phase into polycrystalline one. Afterwards a halide mediated ligand exchange (LE) was carried out in order to remove insulating oleic acid residues from the PbS NPL surface and to form stable dispersions in polar organic solvents enabling thin-film fabrication. Both CE and LE processes were monitored by several characterization techniques. Furthermore, we measured the electrical conductivity of the resulting PbS NPL-based films before and after LE and compared the processing in ambient to inert atmosphere. Finally, we fabricated field-effect transistors with an on/off ratio of up to 60 and linear charge carrier mobility for holes of 0.02 cm(2) V-1 s(-1).
引用
收藏
页码:19370 / 19379
页数:10
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