Spin Hall angle versus spin diffusion length: Tailored by impurities

被引:89
|
作者
Gradhand, Martin [1 ,2 ]
Fedorov, Dmitry V. [2 ]
Zahn, Peter [2 ]
Mertig, Ingrid [1 ,2 ]
机构
[1] Max Planck Inst Mikrostrukturphys, D-06120 Halle, Germany
[2] Univ Halle Wittenberg, Inst Phys, D-06099 Halle, Germany
关键词
MEMORY LOSS; INJECTION; MAGNETORESISTANCE; TRANSPORT;
D O I
10.1103/PhysRevB.81.245109
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We performed ab initio studies to search for materials where a large spin Hall effect caused by skew scattering is accompanied by a long spin diffusion length. Samples with such properties are promising candidates for all-metallic spintronics devices. Here we consider Cu, Au, and Pt hosts which are typical materials used in experiments. In particular, we identified light impurities such as C and N in Au and heavy impurities such as Bi in Cu to meet this criterion. They exhibit a large spin Hall angle (alpha > 0.06) and an appropriate spin diffusion length of about 100 nm. In addition, a pronounced dependence of the spin diffusion length on the scattering properties of the impurity is found for Cu and Au hosts, in contrast to Pt where much smaller variations are obtained.
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页数:5
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