5 gbps 0.35μm CMOS driver for laser diode or optical modulator

被引:1
|
作者
Li, LM [1 ]
Huang, T [1 ]
Feng, J [1 ]
Wang, ZG [1 ]
Xiong, MZ [1 ]
机构
[1] SE Univ, Inst RF & OE ICs, Nanjing 210096, Peoples R China
来源
ESSCIRC 2004: PROCEEDINGS OF THE 30TH EUROPEAN SOLID-STATE CIRCUITS CONFERENCE | 2004年
关键词
D O I
10.1109/ESSCIR.2004.1356672
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a versatile driver for laser diode or optical modulator using a 0.35-mum CMOS process. In this driver, a quasi push-pull source follower is introduced. Combined with a dynamic amplification technique, the driver's slew rate and output voltage swing are increased; meanwhile the overshoot is efficiently reduced. The driver works well at 2.5 Gbps under 3.3 V and 5 V supply voltage, consuming typical power of 310 mW and 945 mW respectively. It can give modulation voltage (@ 50-Omega load) ranging from 0.55 Vp-p to 4.2 Vp-p under 3.3 V supply voltage and 0.6 Vp-p to 6.2 Vp-p under 5 V supply voltage, therefore it can be used as laser diode or optical modulator driver. When the driver was tested with a LiNbO3 modulator, clear optical eye diagrams were measured at 2.5 Gbps, 5 Gbps respectively. The die area is 0.57 mm(2).
引用
收藏
页码:279 / 282
页数:4
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