Interlayer and interfacial exchange coupling in ferromagnetic metal/semiconductor heterostructures

被引:20
|
作者
Wilson, M. J. [1 ]
Zhu, M. [1 ]
Myers, R. C. [2 ]
Awschalom, D. D. [2 ]
Schiffer, P. [1 ]
Samarth, N. [1 ]
机构
[1] Penn State Univ, Dept Phys, University Pk, PA 16802 USA
[2] Univ Calif Santa Barbara, Dept Phys, Santa Barbara, CA 93106 USA
来源
PHYSICAL REVIEW B | 2010年 / 81卷 / 04期
基金
美国国家科学基金会;
关键词
BIQUADRATIC EXCHANGE; ORIGIN; BIAS;
D O I
10.1103/PhysRevB.81.045319
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We describe a systematic study of the exchange coupling between a magnetically hard metallic ferromagnet (MnAs) and a magnetically soft ferromagnetic semiconductor (Ga(1-x)Mn(x)As) in bilayer and trilayer heterostructures. An exchange spring model of MnAs/Ga(1-x)Mn(x)As bilayers accounts for the variation in the exchange-bias field with layer thickness and composition. We also present evidence for hole-mediated interlayer exchange coupling in MnAs/p-GaAs/Ga(1-x)Mn(x)As trilayers and study the dependence of the exchange-bias field on the thickness of the spacer layer.
引用
收藏
页数:6
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