High-Q design of semiconductor-based ultrasmall photonic crystal nanocavity

被引:42
|
作者
Nomura, Masahiro [1 ]
Tanabe, Katsuaki [1 ]
Iwamoto, Satoshi [1 ,2 ]
Arakawa, Yasuhiko [1 ,2 ]
机构
[1] Univ Tokyo, Inst Nano Quantum Informat Elect, Tokyo 1538505, Japan
[2] Univ Tokyo, Inst Ind Sci, Tokyo 1538505, Japan
来源
OPTICS EXPRESS | 2010年 / 18卷 / 08期
关键词
SINGLE-QUANTUM-DOT; LASER; MICROCAVITIES; EMISSION;
D O I
10.1364/OE.18.008144
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We report a high-Q design for a semiconductor-based two-dimensional zero-cell photonic crystal (PhC) nanocavity with a small mode volume. The optimization of displacements of hexagonal-lattice air holes in the Gamma-M direction, in addition to the Gamma-K direction, resulted in a cavity quality factor Q of 2.8 x 10(5) sustaining the small modal volume of 0.23(lambda(0)/n)(3). The momentum space consideration of out-of-plane radiation loss showed that the optimization of air hole displacements in both the in-plane x and y directions reduced FT components in the leaky region along the k(x) and k(y) axes, respectively. This high-Q cavity design is applicable to Si and GaAs semiconductor materials. (c) 2010 Optical Society of America
引用
收藏
页码:8144 / 8150
页数:7
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