Dielectric properties of Bi doped Sb2Te3 thin films studied by terahertz time-domain spectroscopy

被引：0
|
作者：
Chen, Qinjun [1 ]
Shi, Dongqi [1 ]
Wang, Xiaolin [1 ]
Lewis, R. A. [1 ]
Zhang, Chao [1 ]
机构：
[1] Univ Wollongong, Inst Superconducting & Elect Mat, Wollongong, NSW 2522, Australia
来源：
2013 38TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) | 2013年
关键词：
TOPOLOGICAL INSULATORS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have fabricated Sb2Te3 thin films, with different thicknesses by controlling the deposition times, using pulsed laser deposition. We studied the dielectric properties using terahertz time domain spectroscopy (TDS). The real and imaginary parts of the complex refractive index of Sb2Te3 thin films were presented.
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页数：2
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