RHEED analysis of twinned homoepitaxial layers grown on Si(111)√3x√3-B

Homoepitaxial Si layers grown on Si(111)root 3 X root 3-B have an orientation rotated by 180 degrees with respect to the substrate, i.e. a twinned orientation. The growth of the twinned epitaxial layers is monitored in situ using reflection high-energy electron diffraction (RHEED). RHEED intensities change quite sensitively with respect to the thickness of the twinned layers even at the thickness of two bilayers. After six-bilayer growth, the RHEED pattern is almost the same as the pattern diffracted from the substrate in the incident azimuth rotated by 180 degrees. Calculations of RHEED intensities based on the multiple scattering theory reproduce well the measured intensities. (C) 2000 Published by Elsevier Science S.A. All rights reserved.