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Inelastic electron tunneling due to magnons and phonons of antiferromagnetic layered MnPSe3 semiconductors
被引:8
|作者:
Yamaguchi, K
[1
]
机构:
[1] Akita Univ, Fac Engn & Resource Sci, Dept Comp Sci & Technol, Akita 0108502, Japan
来源:
关键词:
D O I:
10.1002/pssb.200301509
中图分类号:
O469 [凝聚态物理学];
学科分类号:
070205 ;
摘要:
Inelastic electron tunneling spectra of Pb/MnPSe3/Pb junctions are measured below liquid helium temperature in the normal state of lead under an external magnetic field. The insulating barrier of MnPSe3, an antiferromagnetic layered transition metal phosphorous triselenide, is cleaved from a single crystal along the layer. The spectra are explained by interactions between tunneling electrons and MnPSe3 antiferromagnetic magnons as well as those between tunneling electrons and MnPSe3 phonons. The contribution of MnPSe3 magnons to inelastic processes is comparable to that of MnPSe3 phonons.
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页码:634 / 639
页数:6
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