Electrostriction Coefficients of GaN, AlN, MgO and ZnO in the Wurtzite Structure from First-Principles

被引：0

作者：

Kornev, I. ^{[1
]}

Willatzen, M. ^{[1
]}

Lassen, B. ^{[1
]}

Voon, L. C. Lew Yan ^{[2
]}

机构：

[1] Univ Southern Denmark, Mads Clausen Inst, Alsion 2, DK-6400 Sonderborg, Denmark

[2] Wright State Univ, Dept Phys, Dayton, OH 45435 USA

来源：

PHYSICS OF SEMICONDUCTORS | 2009年 / 1199卷

关键词：

electrostriction; wurtzite; ab initio;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

First-principles calculations have been performed on wurtzite AlN, GaN, MgO and ZnO, with a view to obtaining electrostriction coefficients.

引用

页码：71 / +

页数：2

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