On the barrier heights distribution in Pd2Si/Si Schottky diodes

被引：0

作者：

Chand, S ^{[1
]}

Kumar, J ^{[1
]}

机构：

[1] INDIAN INST TECHNOL,MAT SCI PROGRAM,KANPUR,UTTAR PRADESH,INDIA

来源：

SEMICONDUCTOR DEVICES | 1996年 / 2733卷

关键词：

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：196 / 198

页数：3

共 50 条

[1] On the existence of a distribution of barrier heights in Pd2Si/Si Schottky diodes
Chand, S
Kumar, J
[J]. JOURNAL OF APPLIED PHYSICS, 1996, 80 (01) : 288 - 294
[2] Evidence for the double distribution of barrier heights in Pd2Si/n-Si Schottky diodes from I-V-T measurements
Chand, S
Kumar, J
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1996, 11 (08) : 1203 - 1208
[3] Current transport in Pd2Si/n-Si(100) Schottky barrier diodes at low temperatures
Chand, S
Kumar, J
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1996, 63 (02): : 171 - 178
[4] ENHANCED QUANTUM EFFICIENCY OF PD2SI SCHOTTKY INFRARED DIODES ON (111) SI
MCKEE, RC
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (07) : 968 - 970
[5] CURRENT-VOLTAGE CHARACTERISTICS OF PD2SI BASED SCHOTTKY DIODES ON RHO-TYPE (111) SILICON AND EVALUATION OF THEIR BARRIER HEIGHTS
CHAND, S
KUMAR, J
[J]. SOLID-STATE ELECTRONICS, 1995, 38 (05) : 1103 - 1104
[6] The gaussian distribution of inhomogeneous barrier heights in PtSi/p-Si Schottky diodes
Gholami, Somayeh
Hajghassem, Hassan
Erfanian, A. R.
[J]. IEICE ELECTRONICS EXPRESS, 2009, 6 (13): : 972 - 978
[7] REORDERING OF POLYCRYSTALLINE PD2SI ON EPITAXIAL PD2SI
COMRIE, CM
LIU, JC
HUNG, LS
MAYER, JW
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (07) : 2402 - 2405
[8] ELECTRONIC STATES AND SCHOTTKY BARRIERS AT PD2SI/SI(111) INTERFACES
HERMAN, F
CASULA, F
KASOWSKI, RV
[J]. PHYSICA B & C, 1983, 117 (MAR): : 837 - 839
[9] MOBILITY OF PD AND SI IN PD2SI
ZINGU, EC
MAYER, JW
COMRIE, C
PRETORIUS, R
[J]. PHYSICAL REVIEW B, 1984, 30 (10): : 5916 - 5922
[10] CURRENT-VOLTAGE CHARACTERISTICS AND BARRIER PARAMETERS OF PD2SI/P-SI(111) SCHOTTKY DIODES IN A WIDE TEMPERATURE-RANGE
CHAND, S
KUMAR, J
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1995, 10 (12) : 1680 - 1688

← 1 2 3 4 5 →